Ferroelectric nanodomains in epitaxial GeTe thin films

نویسندگان

چکیده

In this paper the authors have grown germanium telluride thin films by molecular beam epitaxy on silicon as a proposed system for ferroelectric-based spintronics with high spin-orbit coupling. The structure of ferroelectric domains is explored in wide range film thickness. After elucidating domain wall type and volume fraction, stability respect to thermomechanical stress discussed.

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ژورنال

عنوان ژورنال: Physical Review Materials

سال: 2021

ISSN: ['2476-0455', '2475-9953']

DOI: https://doi.org/10.1103/physrevmaterials.5.124415